The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 10, 2015
Filed:
Mar. 23, 2012
Jung-chi Jeng, Tainan, TW;
Chih-cherng Jeng, Madou Township, TW;
Chih-kang Chao, Tainan, TW;
Ching-hwanq Su, Tainan, TW;
Yan-hua Lin, Tainan, TW;
Yu-shen Shih, Hemei Township, TW;
Jung-Chi Jeng, Tainan, TW;
Chih-Cherng Jeng, Madou Township, TW;
Chih-Kang Chao, Tainan, TW;
Ching-Hwanq Su, Tainan, TW;
Yan-Hua Lin, Tainan, TW;
Yu-Shen Shih, Hemei Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A backside illuminated CMOS image sensor comprises an extended photo active region formed over a substrate using a first high energy ion implantation process and an isolation region formed over the substrate using a second high energy ion implantation process. The extended photo active region is enclosed by the isolation region, which has a same depth as the extended photo active region. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.