Taipei, Taiwan

Yu-Jen Chang

This inventor holds 4 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2013-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Jen Chang. Retrieved from https://idiyas.com/inventor/yu-jen-chang-8llmo8i6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 10(Granted Patents)


Location History:

  • Hsinchu County, TW (2013)
  • Taipei County, TW (2013 - 2015)

Company Filing History:


Years Active: 2013-2015

Loading Chart...
4 patents (USPTO):Explore Patents

Title: Innovations of Yu-Jen Chang in Non-Volatile Memory Technology

Introduction

Yu-Jen Chang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of non-volatile memory technology, holding a total of 4 patents. His innovative methods have paved the way for advancements in memory manufacturing processes.

Latest Patents

One of Yu-Jen Chang's latest patents is a method for manufacturing non-volatile memory. This method involves forming a gate structure on a substrate, which includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer is partially removed to create a symmetrical opening among the gate conductive layer, substrate, and gate dielectric layer. A cavity is formed on the end sides of the gate dielectric layer. A first oxide layer is then formed on the sidewall and bottom of the gate conductive layer, while a second oxide layer is created on the surface of the substrate. A nitride material layer is formed to cover the gate structure, the first and second oxide layers, and the substrate, filling the opening. An etching process is performed to partially remove the nitride material layer, resulting in a nitride layer on the sidewall of the gate conductive layer that extends into the opening.

Another notable patent involves a non-volatile memory that consists of a substrate, a gate dielectric layer, a gate conductive layer, a nitride layer, a spacer, a first oxide layer, and a second oxide layer. The gate conductive layer, substrate, and gate dielectric layer work together to create a symmetrical opening. The nitride layer is L-shaped, featuring a vertical part that extends along the sidewall of the gate conductive layer and a horizontal part that extends into the opening. This structure is integral, with the height of the vertical part being below the top surface of the gate conductive layer. The spacer is positioned on the substrate and the nitride layer, while the first and second oxide layers are strategically placed among the various components.

Career Highlights

Yu-Jen Chang is currently employed at United Microelectronics Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in enhancing the efficiency and performance of non-volatile memory devices.

Collaborations

Throughout his career, Yu-Jen has collaborated with notable colleagues, including Tzu-Ping Chen and Chien-Hung Chen. These collaborations have

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…