The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Jul. 26, 2010
Chien-hung Chen, Hsinchu, TW;
Tzu-ping Chen, Hsinchu, TW;
Yu-jen Chang, Taipei County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A manufacturing method of a non-volatile memory is disclosed. A gate structure is formed on a substrate and includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer is partly removed, thereby a symmetrical opening is formed among the gate conductive layer, the substrate and the gate dielectric layer, and a cavity is formed on end sides of the gate dielectric layer. A first oxide layer is formed on a sidewall and bottom of the gate conductive layer, and a second oxide layer is formed on a surface of the substrate. A nitride material layer is formed covering the gate structure, the first and second oxide layer and the substrate and filling the opening. An etching process is performed to partly remove the nitride material layer, thereby a nitride layer is formed on a sidewall of the gate conductive layer and extending into the opening.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile