Yu-Chi Wang

This inventor holds 5 USPTO granted patents. Top assignee: Win Semiconductors Corp.. Active years: 2008-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Chi Wang. Retrieved from https://idiyas.com/inventor/yu-chi-wang-x9zyzzqw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 5

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 11(Granted Patents)

Location History:

Tao Yuan Shien, TW (2008 - 2010)
Tao Yuan, TW (2019 - 2021)

Company Filing History:

5 out of 101

Win Semiconductors Corp.

patents

Years Active: 2008-2021

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5 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11177379 - Gate-sinking pHEMTs having extremely uniform pinch-off/threshold voltage (2021-11-16),

2. 10361272 - InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer (2019-07-23),

3. 7842591 - Method of fabricating short-gate-length electrodes for integrated III-V compound semiconductor devices (2010-11-30),

4. 7679870 - On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology (2010-03-16),

5. 7420417 - Two-port dual-gate HEMT for discrete device application (2008-09-02),

Title: The Innovative Mind of Yu-Chi Wang: Patents and Contributions in Semiconductor Technology

Introduction: Yu-Chi Wang is a renowned inventor based in Tao Yuan Shien, Taiwan, with an impressive portfolio of five patents to his name. His work primarily focuses on advancements in semiconductor technology, particularly in high electron mobility transistors, which are crucial in modern electronics.

Latest Patents: Among his latest innovations, Yu-Chi Wang has developed a gate-sinking pseudomorphic high electron mobility transistor (pHEMT) which showcases an advanced design featuring a compound semiconductor substrate. This device incorporates an epitaxial structure consisting of a buffer layer, a channel layer, a Schottky layer, and a cap layer. The unique composition of the Schottky layer includes multiple stacked regions of semiconductor materials, providing pivotal contact interfaces that enhance the performance of the transistor. Additionally, Wang's patent on the InGaAlP Schottky field effect transistor integrates an AlGaAs carrier supply layer, innovatively designed with a gate recess that optimizes the device's functionality and efficiency.

Career Highlights: Yu-Chi Wang has made significant contributions during his tenure at Win Semiconductors Corporation, a leader in the semiconductor manufacturing industry. His inventive spirit and technical expertise have positioned him as a key player in the development of advanced semiconductor devices.

Collaborations: Throughout his career, Yu-Chi Wang has collaborated with esteemed colleagues, including Cheng-Kuo Lin and Joseph Liu. These partnerships have fostered a conducive environment for innovation and have led to the successful development of groundbreaking semiconductor technologies.

Conclusion: With a total of five patents, Yu-Chi Wang continues to push the boundaries of semiconductor technology through his innovative work and collaborations. His contributions are vital in the evolution of modern electronics, making him a notable figure in the field of invention and innovation.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]