The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2019
Filed:
Oct. 30, 2017
Win Semiconductors Corp., Tao Yuan, TW;
Shih-Ming Joseph Liu, Tao Yuan, TW;
Yu-Chi Wang, Tao Yuan, TW;
Cheng-Guan Yuan, Tao Yuan, TW;
Hsi-Tsung Lin, Tao Yuan, TW;
Chia Hsiung Lee, Tao Yuan, TW;
Win Semiconductors Corp., Tao Yuan, TW;
Abstract
An InGaAlP Schottky field effect transistor with AlGaAs carrier supply layer comprises a buffer layer, a channel layer, a carrier supply layer, a Schottky barrier layer and a cap layer sequentially formed on a compound semiconductor substrate; the cap layer has a gate recess, a bottom of the gate recess is defined by the Schottky barrier layer; a source electrode and a drain electrode are formed respectively on the cap layer at two sides with respect to the gate recess, the source electrode and the drain electrode form respectively an ohmic contact with the cap layer; a gate electrode is formed on the Schottky barrier layer within the gate recess, the gate electrode and the Schottky barrier layer form a Schottky contact; wherein the carrier supply layer is made of AlGaAs; the Schottky barrier layer is made of InGaAlP.