Hwaseong, South Korea

Youngkwan Cha

This inventor holds 2 USPTO granted patents and 8 published patent applications. Top assignees: Samsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Youngkwan Cha. Retrieved from https://idiyas.com/inventor/youngkwan-cha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 1


Company Filing History:


Years Active: 2024-2025

Loading Chart...
2 patents (USPTO):Explore Patents

Title: Youngkwan Cha - Innovator in Semiconductor Technology

Introduction

Youngkwan Cha is an inventor based in Suwon-si, South Korea. He is known for his contributions to the field of semiconductor technology. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.

Latest Patent Applications

Youngkwan Cha's recent patent applications include a "VERTICALLY STACKED MEMORY DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME." This application describes a vertically stacked memory device that features a plurality of bit lines extending in a first direction, along with oxide semiconductor layers and capacitors. Each oxide semiconductor layer is designed to include a specific proportion of tin (Sn) among all metals. Another notable application is for a "SEMICONDUCTOR DEVICE AND OXIDE SEMICONDUCTOR THIN FILM." This application outlines a semiconductor device that includes an oxide semiconductor layer with an amorphous phase, which also contains tin (Sn) and another metal element. The design emphasizes the importance of the content of tin in the semiconductor layer.

Conclusion

Youngkwan Cha is an emerging inventor in the semiconductor field, showcasing innovative concepts through his latest patent applications. His work has the potential to contribute significantly to advancements in memory devices and semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…