Samsung Electronics Co., Ltd.

Korea Advanced Institute of Science and Technology

Youngkwan Cha

Jaechul Park

Sanghun Jeon

Provided are semiconductor devices having a three-dimensional stacked structure and methods of manufacturing the same. A semiconductor device includes a plurality of channel structures on a substrate and arranged in a three-dimensional array; a plurality of gate electrodes extending in a direction parallel to the substrate; and a plurality of source and drain electrodes extending in a direction perpendicular to the substrate. The gate electrodes are connected to the channel structures arranged in the direction parallel to the substrate, and the source and drain electrodes are connected to the channel structures arranged in the direction perpendicular to the substrate. The channel structures include a channel layer and a ferroelectric layer on the channel layer.

Semiconductor device having 3D stacked structure and method of manufacturing the same

A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.

Semiconductor device, array structure of semiconductor devices, neuromorphic circuit including the semiconductor devices, and computing apparatus including the neuromorphic circuit

Growing community of inventors

Hwaseong-si, South Korea

Youngkwan Cha