The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2024
Filed:
Apr. 08, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jaechul Park, Yongin-si, KR;
Youngkwan Cha, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/30 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/78391 (2014.09); H01L 29/516 (2013.01); H10B 51/30 (2023.02);
Abstract
A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.