The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2026

Filed:

Oct. 27, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Moonil Jung, Suwon-si, KR;

Sangwook Kim, Suwon-si, KR;

Euntae Kim, Suwon-si, KR;

Jeeeun Yang, Suwon-si, KR;

Kwanghee Lee, Suwon-si, KR;

Youngkwan Cha, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H10D 30/67 (2025.01); H10D 30/69 (2025.01); H10D 99/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/6755 (2025.01); H10D 30/6734 (2025.01); H10D 30/6757 (2025.01); H10D 30/751 (2025.01); H10D 99/00 (2025.01);
Abstract

Semiconductor devices and manufacturing methods thereof are provided. A semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.


Find Patent Forward Citations

Jung, Moonil. (2026). Semiconductor device and method of manufacturing the same (U.S. Patent No. 12765001). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12765001

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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