The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2025

Filed:

Mar. 07, 2022
Applicants:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Youngkwan Cha, Hwaseong-si, KR;

Jaechul Park, Yongin-si, KR;

Sanghun Jeon, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/10 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/10 (2023.02);
Abstract

Provided are semiconductor devices having a three-dimensional stacked structure and methods of manufacturing the same. A semiconductor device includes a plurality of channel structures on a substrate and arranged in a three-dimensional array; a plurality of gate electrodes extending in a direction parallel to the substrate; and a plurality of source and drain electrodes extending in a direction perpendicular to the substrate. The gate electrodes are connected to the channel structures arranged in the direction parallel to the substrate, and the source and drain electrodes are connected to the channel structures arranged in the direction perpendicular to the substrate. The channel structures include a channel layer and a ferroelectric layer on the channel layer.


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