Tokyo, Japan

Yoshikazu Oshika

This inventor holds 8 USPTO granted patents and 2 EPO patents. Top assignee: Dowa Electronics Materials Co., Ltd.. Active years: 2010-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Oshika. Retrieved from https://idiyas.com/inventor/yoshikazu-oshika

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 25.0

 

Average Co-Inventor Count = 1.9

ph-index = 1

Forward Citations = 8(Granted Patents)


Location History:

  • Chiyoda-ku, JP (2012 - 2014)
  • Tokyo, JP (2010 - 2015)

Company Filing History:


Years Active: 2010-2015

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8 patents (USPTO):Explore Patents

Title: Innovations of Yoshikazu Oshika

Introduction

Yoshikazu Oshika is a prominent inventor based in Chiyoda-ku, Japan. He has made significant contributions to the field of semiconductor materials, particularly in the development of silicon-doped gallium arsenide (GaAs) technologies. With a total of 8 patents to his name, his work has had a substantial impact on the electronics industry.

Latest Patents

Oshika's latest patents include the "Si-doped GaAs single crystal ingot and process for producing the same" and the "Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingot." These inventions provide a method for creating an Si-doped GaAs single crystal ingot with low crystallinity values, measured in terms of etch pit density (EPD) per unit area, while maintaining good crystallinity. The process involves synthesizing a GaAs compound material in a separate oven, inserting an Si dopant, and utilizing a vertical temperature gradient method for crystal growth. Additionally, he has developed a solder layer and electronic device bonding substrate that ensures high bonding strength and low failure rates, even with simplified bonding methods.

Career Highlights

Oshika is currently employed at Dowa Electronics Materials Co., Ltd., where he continues to innovate in the field of electronic materials. His work has been instrumental in advancing the technology used in various electronic devices, contributing to the efficiency and reliability of modern electronics.

Collaborations

Throughout his career, Oshika has collaborated with notable colleagues, including Masayuki Nakano and Munenori Hashimoto. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yoshikazu Oshika's contributions to the field of semiconductor materials and his innovative patents have significantly advanced technology in the electronics industry. His work continues to influence the development of high-performance electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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