Yoshikazu Nakagawa

This inventor holds 15 USPTO granted patents and 1 published patent application, primarily in Compound Semiconductor Devices. Top assignee: Rohm Co., Ltd.. Active years: 1992-2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Nakagawa. Retrieved from https://idiyas.com/inventor/yoshikazu-nakagawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 15 (Patent Applications = 1)

% Patents Active = 86.7

Average Co-Inventor Count = 1.3

ph-index = 5

Forward Citations = 93(Granted Patents)

Company Filing History:

15 out of 6,021

Rohm Co., Ltd.

patents

Years Active: 1992-2013

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Areas of Expertise:

Trench Gate VDMOSFET

Chip-On-Chip Structure

High Electron Mobility Transistor

Photoresist Pattern Formation

Oblique Metal Deposition

Narrow-Line-Channel FET

Manufacturing Process

Compound Semiconductor

15 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8384152 - Semiconductor device having trench gate VDMOSFET and method of manufacturing the same (2013-02-26),

2. 8148783 - Semiconductor device (2012-04-03),

3. 7307349 - Semiconductor device of chip-on-chip structure, assembling process therefor, and semiconductor chip to be bonded to solid surface (2007-12-11),

4. 6965166 - Semiconductor device of chip-on-chip structure (2005-11-15),

5. 6897091 - Semiconductor device and manufacturing method thereof (2005-05-24),

6. 6404040 - Semiconductor device with metal peripheral area (2002-06-11),

7. 5726467 - Multiple narrow-line-channel fet having improved noise characteristics (1998-03-10),

8. 5412230 - High electron mobility transistor having improved electron (1995-05-02),

9. 5366849 - Photoresist pattern formation through etching where the imaging exposure (1994-11-22),

10. 5343056 - Compound semiconductor device (1994-08-30),

11. 5321278 - High electron mobility transistor (1994-06-14),

12. 5313093 - Compound semiconductor device (1994-05-17),

13. 5296728 - Compound semiconductor device with different gate-source and gate-drain (1994-03-22),

14. 5126288 - Fine processing method using oblique metal deposition (1992-06-30),

15. 5110751 - Method of manufacturing a compound semiconductor device (1992-05-05),

Title: Innovations of Yoshikazu Nakagawa

Introduction

Yoshikazu Nakagawa is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work has been instrumental in advancing the capabilities of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device featuring a trench gate VDMOSFET and a method for its manufacturing. This innovative device includes a first conductivity type layer, a body layer of a second conductivity type, and a gate trench that reaches the first conductivity type layer. Additionally, it incorporates a source region formed around the gate trench and a gate insulating film. Another notable patent describes a semiconductor device that includes a semiconductor layer, first and second impurity regions, and a field insulating film. This design enhances the performance and efficiency of semiconductor devices.

Career Highlights

Yoshikazu Nakagawa has dedicated his career to research and development in the semiconductor industry. He is currently employed at Rohm Co., Ltd., where he continues to innovate and push the boundaries of semiconductor technology. His expertise and inventions have made a lasting impact on the industry.

Collaborations

Throughout his career, Nakagawa has collaborated with notable colleagues, including Junichi Hikita and Koji Yamamoto. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Yoshikazu Nakagawa's contributions to the field of semiconductor devices are noteworthy and impactful. His innovative patents and collaborations highlight his dedication to advancing technology. His work continues to influence the semiconductor industry and inspire future innovations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: