The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Sep. 19, 2008
Yoshikazu Nakagawa, Kyoto, JP;
Naoki Izumi, Kyoto, JP;
Masaki Nagata, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor device includes a first conductivity type layer of a first conductivity type, a body layer of a second conductivity type formed on the first conductivity type layer, a gate trench passing through the body layer so that the deepest portion thereof reaches the first conductivity type layer, a source region of the first conductivity type formed around the gate trench on the surface layer portion of the body layer, a gate insulating film formed on the bottom surface and the side surface of the gate trench, and a gate electrode embedded in the gate trench through the gate insulating film, and the bottom surface of the gate electrode and the upper surface of the first conductivity type layer are flush with each other.