The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 22, 1994
Filed:
Feb. 24, 1993
Applicant:
Inventor:
Yoshikazu Nakagawa, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257282 ; 257280 ; 257283 ; 257284 ;
Abstract
A compound semiconductor device includes a first semiconductor layer, a second semiconductor layer providing source and drain regions, and a composite layer consisting of a bottom SiN layer, and SiON layer and a top SiN layer on the second semiconductor layer. A gate electrode has a perpendicular portion extending through an opening in the composite layer and an enlarged region above the top SiN layer to support the electrode at a position closer to the source region than the drain region, and the bottom SiN layer and the SiON layer are recessed so as to be spaced from the gate electrode.