The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 1998
Filed:
Sep. 30, 1992
Applicant:
Inventor:
Yoshikazu Nakagawa, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257192 ; 257194 ;
Abstract
Insulating layers are formed, for instance, by ion injection, in a multilayer of compound semiconductor layers in regions spaced at predetermined intervals, to leave a plurality of narrow channel layers between the insulating layers. A gate electrode is formed on the insulating layers and channel layers so as to traverse those layers.