The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 1994
Filed:
Nov. 18, 1992
Yoshikazu Nakagawa, Kyoto, JP;
Masayuki Sonobe, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
The fine pattern processing method comprises an exposure step for forming a resist pattern having a predetermined opening on a substrate, a vapor deposition step for forming a vapor deposited film on a portion of the substrate which is exposed at the opening by performing an inclined vapor deposition over the resist pattern, and an etching step for performing the etching treatment with use of the vapor deposited film as a mask. In the exposure step, the exposure time of the photoresist is continuously varied within the wafer plane in relation to the continuous changes in the vapor deposition angles within the wafer plane during the inclined vapor deposition, so that the taper angle of the resist pattern is changed. In other words, the exposure time is shortened at the region where the vapor deposition angle is small so as to increase the taper angle of the resist pattern, whereas the exposure time is prolonged at the region where the vapor deposition angle is large in order that the taper angle is decreased.