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For the Inventor, By the Inventor

Kawaguchi, Japan

Yoshihiro Kishita

This inventor holds 7 USPTO granted patents. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1987-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Kishita. Retrieved from https://idiyas.com/inventor/yoshihiro-kishita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 100.0

Average Co-Inventor Count = 2.4

ph-index = 6

Forward Citations = 95(Granted Patents)


Location History:

  • Kawasaki, JP (1987 - 1990)
  • Tokyo, JP (1994)
  • Kawaguchi, JP (1995 - 1997)

Company Filing History:

goldMedal7 out of 53,262 
 
Kabushiki Kaisha Toshiba
 patents

Years Active: 1987-1997

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7 patents (USPTO):Explore Patents
1. 5656857 - Semiconductor device with insulating resin layer and substrate having (1997-08-12),
2. 5409849 - Method of manufacturing a compound semiconductor device having gate (1995-04-25),
3. 5329154 - Compound semiconductor integrated circuit having improved electrode (1994-07-12),
4. 4951121 - Semiconductor device with a 3-ply gate electrode (1990-08-21),
5. 4695869 - GAAS semiconductor device (1987-09-22),
6. 4674174 - Method for forming a conductor pattern using lift-off (1987-06-23),
7. 4650543 - Method of forming electrode pattern of semiconductor device (1987-03-17),

Title: Innovations of Yoshihiro Kishita

Introduction

Yoshihiro Kishita is a prominent inventor based in Kawaguchi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.

Latest Patents

Kishita's latest patents include a semiconductor device with an insulating resin layer and a substrate designed to reduce thickness while maintaining a shielding effect. This innovative shielding package features a substrate with multiple electrode patterns and side walls that are formed at the peripheral end of the surface. Additionally, he has developed a method for manufacturing a compound semiconductor device that minimizes variations in characteristics caused by distance discrepancies between the source, gate, and drain. This method aims to achieve high yield and improve power gain for high-speed operation.

Career Highlights

Yoshihiro Kishita is associated with Kabushiki Kaisha Toshiba, where he has been instrumental in advancing semiconductor technologies. His expertise and innovative approaches have positioned him as a key figure in the industry.

Collaborations

Kishita has collaborated with notable colleagues, including Tatsuro Mitani and Motoki Furukawa, contributing to various projects that enhance semiconductor device performance.

Conclusion

Yoshihiro Kishita's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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