The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 1987
Filed:
Feb. 28, 1985
Applicant:
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, , JP;
Primary Examiner:
Int. Cl.
CPC ...
C23F / ; B44C / ; C03C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 29591 ; 156646 ; 156652 ; 156656 ; 1566591 ; 20419212 ; 20419232 ; 427 89 ;
Abstract
A method of forming an electrode pattern on a surface of a semiconductor substrate which comprises the steps of forming a metal film which is vulnerable to a reactive ion etching on a surface of the semiconductor substrate, forming on the metal film another metal film which is vulnerable to an ion milling but is resistant to the reactive ion etching, forming a resist pattern on the another metal film, selectively etching the another metal film by the ion milling using the resist pattern as a mask, and selectively etching the metal film by the reactive ion etching using the another metal film as a mask. A semiconductor device having an electrode pattern as formed by the above method is also disclosed.