This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Kabushiki Kaisha Toshiba. Active years: 1987-1990.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1987-1990
Title: Motoki Furukawa: Innovator in Semiconductor Technology
Introduction
Motoki Furukawa is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the efficiency and functionality of semiconductor devices.
Latest Patents
Furukawa's latest patents include a groundbreaking semiconductor device featuring a 3-ply gate electrode. This device comprises a compound semiconductor substrate with a source region, a drain region, and an intervening channel region. It also includes a source electrode on the source region, a drain electrode on the drain region, and a 3-ply gate electrode made of a high melting metal layer, a barrier metal layer, and a gold layer in that order. Another notable patent is a method for forming a conductor pattern using lift-off techniques. This method allows for the creation of a conductor pattern by forming a conductive layer on a semiconductor substrate and utilizing a masking metal film to achieve finer conductor patterns than traditional methods.
Career Highlights
Motoki Furukawa is currently employed at Kabushiki Kaisha Toshiba, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.
Collaborations
Furukawa has collaborated with notable colleagues such as Yoshihiro Kishita and Tatsuro Mitani. These collaborations have further enriched his research and development efforts in the semiconductor field.
Conclusion
Motoki Furukawa is a key figure in semiconductor innovation, with a focus on developing advanced technologies that enhance device performance. His contributions are shaping the future of semiconductor applications.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
