Tokyo, Japan

Tatsuro Mitani


Average Co-Inventor Count = 2.2

ph-index = 7

Forward Citations = 103(Granted Patents)


Company Filing History:


Years Active: 1986-1994

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8 patents (USPTO):Explore Patents

Title: Innovations of Tatsuro Mitani

Introduction

Tatsuro Mitani is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on improving the manufacturing processes and efficiency of semiconductor devices.

Latest Patents

One of his latest patents is a method of manufacturing a semiconductor device. This innovative technique involves isolation etching and gate recess etching of a semiconductor layer, utilizing a side wall insulating layer shaped like a forward taper as a mask. The design allows for a consistent taper angle, which can be adjusted according to specific conditions, thereby enhancing the design margin of electrode wiring patterns. Another notable patent is for a semiconductor device featuring a 3-ply gate electrode. This device includes a compound semiconductor substrate with a source region, drain region, and an intervening channel region, along with a gate electrode that significantly reduces gate resistance.

Career Highlights

Tatsuro Mitani is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has been instrumental in advancing semiconductor technologies, contributing to the company's reputation for innovation and excellence.

Collaborations

Throughout his career, Mitani has collaborated with notable colleagues, including Yoshihiro Kishita and Motoki Furukawa. These collaborations have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Tatsuro Mitani's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of more efficient and effective semiconductor devices.

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