The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 1988
Filed:
Feb. 19, 1987
Applicant:
Inventors:
Tatsuro Mitani, Tokyo, JP;
Toshikazu Fukuda, Kawasaki, JP;
Assignee:
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156653 ; 156657 ; 1566591 ; 156662 ; 357 41 ; 357 67 ; 357 71 ; 437 41 ; 437 58 ; 437192 ; 437197 ; 437228 ; 437238 ; 437241 ;
Abstract
Disclosed is a semiconductor device with its gate electrode and source/drain extraction electrodes being made of the same material on a GaAs substrate, and with its source/drain heavily doped regions, which are formed by doping Se in a lightly doped semiconductor layer on the GaAs substrate, self-aligned with both gate electrode and source/drain extraction electrodes.