The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 1986
Filed:
Sep. 07, 1984
Tetsuo Ishii, Fujisawa, JP;
Tatsuro Mitani, Tokyo, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A method for manufacturing semiconductor devices is presented. The method comprises the steps of opening two windows on an insulating layer covering a semiconductor substrate, and forming a polysilicon layer over the entire surface of the insulating layer and the windows. Donor and acceptor impurities are respectively implanted into the portions of the polysilicon layer corresponding to the two opening windows through the appropriate photoresists. The doped impurities are thereafter subjected to annealing to form two different conduction type regions under the two opening windows. Thereafter, a metal layer and a photoresist are deposited in order to make the metal electrodes for each conduction region. Thus, the patterning of the polysilicon can be made in self-alignment with the etching mask, and the formation of two different conduction type semiconductor regions are simultaneously attained.