The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Mar. 17, 1993
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
An integrated circuit including a wafer having a GaAs substrate, an un-doped GaAs layer, and a GaAs active layer. This active layer may have an HEMT structure to improve its operation speed. Also, the substrate may a multi-layer structure to form a three dimensional capacitor. At least one mesa portion is formed on the substrate by removing a portion of the un-doped GaAs layer and GaAs active layer. A source electrode, for example, is formed on the mesa portion, and a ground electrode is formed on an exposed surface of the substrate. These electrodes are connected to each other by means of a wiring metal layer. As a result, the source electrode is easily grounded without using a long bonding wire.