The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 25, 1995
Filed:
May. 07, 1993
Yoshihiro Kishita, Kawaguchi, JP;
Masanori Ochi, Urayasu, JP;
Souichi Imamura, Yokohama, JP;
Toshikazu Fukuda, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
According to this invention, there is provided a method of manufacturing a compound semiconductor which can be formed at a high yield and in which variations in characteristics of elements caused by variations in distances between a source and a gate and between a drain and the gate can be minimized. In addition, there is provided a compound semiconductor device having a structure capable of increasing a power gain and obtaining a high-speed operation. According to this invention, an active layer is formed on a compound semi-conductor substrate, and source/drain electrodes are formed on the active layer to be separated from each other. The wall insulating films are respectively formed on side walls of the electrodes, and a gate electrode is formed between the side wall insulating films to be respectively in contact therewith.