Nagano, Japan

Yoshihiko Nagayasu


Average Co-Inventor Count = 2.2

ph-index = 4

Forward Citations = 59(Granted Patents)


Location History:

  • Kawasaki, JP (1994)
  • Nagano, JP (1997 - 2009)

Company Filing History:


Years Active: 1994-2009

Loading Chart...
5 patents (USPTO):Explore Patents

Title: Innovations of Yoshihiko Nagayasu

Introduction

Yoshihiko Nagayasu is a prominent inventor based in Nagano, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on improving the manufacturing processes and performance characteristics of semiconductor devices.

Latest Patents

One of his latest patents is a method for manufacturing a semiconductor device that includes trenches defined in the substrate surface. This method facilitates the effective removal of etching residues and proper rounding of trench corners, particularly when the trenches are 2 µm or narrower in width. Another notable patent is for a field effect transistor that utilizes an oxide film to enhance performance characteristics and ease of manufacture. This transistor design incorporates a gate over a silicon substrate, featuring a ferroelectric film that optimizes the electric field across the oxide film, ensuring reliable operation.

Career Highlights

Yoshihiko Nagayasu has worked with notable companies such as Fuji Electric Co., Ltd. and Fuji Electric Holdings Co., Ltd. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Throughout his career, Nagayasu has collaborated with esteemed colleagues, including Naoto Fujishima and Akio Kitamura. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Yoshihiko Nagayasu's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods and designs continue to influence the industry and pave the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…