The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Feb. 19, 1997
Yoshihiko Nagayasu, Nagano, JP;
Tatsuhiko Fujihira, Nagano, JP;
Kazutoshi Sugimura, Nagano, JP;
Yoichi Ryokai, Nagano, JP;
Fuji Electric Co. Ltd., , JP;
Abstract
In a method of manufacturing a semiconductor device, an insulating film is formed on a surface of a p-type semiconductor region, and then removed from a selected portion of the p-type semiconductor region. An n-type region having a high concentration of arsenic atoms is formed in a surface layer of the selected portion of the p-type semiconductor region from which the insulating film is removed. Subsequently, boron ions are implanted over an entire surface of the device in a concentration that is lower than that of the n-type region and higher than that of the p-type semiconductor region, to a smaller depth than that of the n-type region, and heat treatment is then effected to form a high-concentration boron diffused region in a surface layer of the p-type semiconductor region. An insulating film on the n-type region and an insulating film on the boron diffused region are selectively removed, and a metallic film is formed on an exposed surface of the n-type region and an exposed surface of the boron diffused region.