The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2009
Filed:
Sep. 23, 2005
Daisuke Kishimoto, Nagano, JP;
Hitoshi Kuribayashi, Nagano, JP;
Yuji Sano, Nagano, JP;
Akihiko Ohi, Nagano, JP;
Yoshihiko Nagayasu, Nagano, JP;
Daisuke Kishimoto, Nagano, JP;
Hitoshi Kuribayashi, Nagano, JP;
Yuji Sano, Nagano, JP;
Akihiko Ohi, Nagano, JP;
Yoshihiko Nagayasu, Nagano, JP;
Fuji Electric Holdings Co., Ltd., Kawasaki, JP;
Abstract
In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a semiconductor substrate, the step of forming trenches includes the steps of performing trench etching using an insulator film, formed on the major surface of the semiconductor substrate and shaped with a predetermined pattern, for a mask to form the trenches; etching the inside of the trenches using a halogen containing gas to smoothen the inside of the trenches; and thermally treating in a non-oxidizing and non-nitriding atmosphere. The manufacturing method according to the invention facilitates well removing the etching residues remaining in the trenches and rounding the trench corners properly when the trenches are 2 μm or narrower in width and even when the trenches are 1 μm or narrower in width.