This inventor holds 3 USPTO granted patents. Top assignees: Fuji Electric Holdings Co., Ltd., Fuji Electric Device Technology Co., Ltd.. Active years: 2008-2009.
Company Filing History:

Years Active: 2008-2009
Title: Hitoshi Kuribayashi: Innovator in Semiconductor Manufacturing
Introduction
Hitoshi Kuribayashi is a notable inventor based in Nagano, Japan. He has made significant contributions to the field of semiconductor manufacturing, holding a total of 3 patents. His innovative methods have advanced the efficiency and reliability of semiconductor devices.
Latest Patents
Kuribayashi's latest patents include a method for manufacturing a semiconductor device that features trenches defined in the substrate surface. This method involves trench etching using an insulator film as a mask, followed by etching the inside of the trenches with a halogen-containing gas. This process effectively removes etching residues and rounds trench corners, particularly for trenches that are 2 µm or narrower in width. Another patent describes a method of manufacturing a semiconductor device that utilizes an anneal technique to planarize and round corners of a trench formed in a substrate. The substrate is annealed in an inert atmosphere at high temperatures, which simplifies the planarization of trench side walls and enhances the reliability of the gate insulator film.
Career Highlights
Throughout his career, Kuribayashi has worked with prominent companies such as Fuji Electric Holdings Co., Ltd. and Fuji Electric Device Technology Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.
Collaborations
Kuribayashi has collaborated with talented individuals in the field, including Yuji Sano and Reiko Hiruta. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies in semiconductor manufacturing.
Conclusion
Hitoshi Kuribayashi's contributions to semiconductor manufacturing through his innovative patents and collaborations highlight his importance in the field. His work continues to influence the development of advanced semiconductor devices, ensuring a lasting impact on technology.