Yoo-Hyun Noh

Title: Yoo-Hyun Noh: Innovator in Nonvolatile Memory Technology

Introduction

Yoo-Hyun Noh is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of four patents. His work focuses on advancing memory technology, which is crucial for modern electronic devices.

Latest Patents

One of his latest patents is titled "Nonvolatile memory device having stacked cell transistors and operating method thereof." This invention describes a nonvolatile memory device that includes a gate line extending in a first horizontal direction, a pillar-shaped gate electrode, and a plurality of bit lines and source lines that are stacked vertically. Each cell transistor in this device features a gate dielectric layer and a channel layer, enhancing the efficiency and performance of memory storage.

Another notable patent is "Nonvolatile memory device and method for fabricating the same." This patent outlines a method for creating a nonvolatile memory device by forming a stacked structure over a substrate. The process includes creating channel layers, slits, and conductive layers, ultimately leading to a highly efficient memory device.

Career Highlights

Yoo-Hyun Noh has worked with notable companies such as SK Hynix Inc. and Seoul National University. His experience in these institutions has allowed him to collaborate on cutting-edge research and development in memory technology.

Collaborations

Some of his coworkers include Jong-Ho Lee and Young-Soo Ahn. Their collaborative efforts have contributed to advancements in the field of nonvolatile memory devices.

Conclusion

Yoo-Hyun Noh's innovative work in nonvolatile memory technology has positioned him as a key figure in the industry. His patents reflect a commitment to enhancing memory device performance, which is essential for the future of electronics.