The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Sep. 11, 2012
Applicants:

Young-soo Ahn, Gyeonggi-do, KR;

Jong-moo Choi, Gyeonggi-do, KR;

Yoo-hyun Noh, Gyeonggi-do, KR;

Inventors:

Young-Soo Ahn, Gyeonggi-do, KR;

Jong-Moo Choi, Gyeonggi-do, KR;

Yoo-Hyun Noh, Gyeonggi-do, KR;

Assignee:

SK Hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a plurality of channel structures formed over a substrate and including a plurality of interlayer dielectric layers alternately stacked with a plurality of channel layers; first and second vertical gates alternately disposed between the channel structures along one direction crossing with the channel structure and adjoining the plurality of channel layers with a memory layer interposed therebetween; and a pair of first and second word lines disposed over or under the channel structures and extending along the one direction in such a way as to overlap with the first and second vertical gates. The first word line is connected with the first vertical gates and the second word line is connected with the second vertical gates.


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