Yongho Ha

Title: Innovations of Yongho Ha

Introduction

Yongho Ha is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on advanced memory devices and three-dimensional semiconductor structures.

Latest Patents

One of his latest patents is for a ferroelectric memory device. This device includes a substrate with source and drain regions, an interface layer, a high dielectric layer, a ferroelectric layer, and a gate electrode layer. Notably, the high dielectric layer and the ferroelectric layer possess phases of different crystal structures. Another significant patent involves a three-dimensional semiconductor device. This device comprises a lower substrate with multiple lower transistors, an upper substrate, and a series of conductive lines connecting the lower transistors to the upper substrate. Each upper transistor features a gate electrode made of silicon germanium (SiGe).

Career Highlights

Yongho Ha is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing memory technology and enhancing device performance.

Collaborations

He has collaborated with notable coworkers, including Weonhong Kim and Yuichiro Sasaki, contributing to various projects and patents in the field.

Conclusion

Yongho Ha's contributions to semiconductor technology through his innovative patents highlight his expertise and commitment to advancing the industry. His work continues to influence the development of next-generation memory devices and semiconductor structures.