The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Sep. 22, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jangeun Lee, Hwaseong-si, KR;
Hyojung Noh, Cheonan-si, KR;
Minwoo Song, Seongnam-si, KR;
Yongho Ha, Hwaseong-si, KR;
Jeongwon Hwang, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 12/00 (2023.01); H10D 62/10 (2025.01); H10D 84/01 (2026.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H10B 12/053 (2023.02); H10B 12/34 (2023.02); H10D 62/107 (2025.01); H10D 84/0144 (2025.01); H10D 84/0156 (2025.01);
Abstract
A method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes an forming a trench in a substrate, forming a gate dielectric layer on the trench, forming a gate layer on the gate dielectric layer, and annealing the gate dielectric layer and the gate layer, wherein, after the first annealing operation, the gate layer includes a molybdenum-tantalum alloy.