The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Oct. 25, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Gabjin Nam, Seoul, KR;
Bongjin Kuh, Suwon-si, KR;
Musarrat Hasan, Sejong-si, KR;
Geonju Park, Suwon-si, KR;
Yongho Ha, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 51/30 (2023.01); H10B 51/20 (2023.01); H10D 30/60 (2025.01); H10D 30/69 (2025.01); H10D 64/68 (2025.01);
U.S. Cl.
CPC ...
H10B 51/30 (2023.02); H10B 51/20 (2023.02); H10D 30/60 (2025.01); H10D 30/701 (2025.01); H10D 64/681 (2025.01); H10D 64/689 (2025.01);
Abstract
A ferroelectric memory device according to the inventive concept includes a substrate having source/drain regions, an interface layer on the substrate, a high dielectric layer on the interface layer, a ferroelectric layer on the high dielectric layer, and a gate electrode layer on the ferroelectric layer. The high dielectric layer and the ferroelectric layer have phases of different crystal structures.