Sejong-si, South Korea

Musarrat Hasan

USPTO Granted Patents = 6 

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2025

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6 patents (USPTO):Explore Patents

Title: Musarrat Hasan: Innovator in Ferroelectric Memory Devices

Introduction

Musarrat Hasan is a prominent inventor based in Sejong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His innovative work focuses on the development of advanced memory devices that enhance data storage capabilities.

Latest Patents

One of Musarrat Hasan's latest patents is a ferroelectric memory device. This device includes a substrate with source and drain regions, an interface layer, a high dielectric layer, a ferroelectric layer, and a gate electrode layer. Notably, the high dielectric layer and the ferroelectric layer possess phases of different crystal structures, which contribute to the device's performance. Another significant patent is a method of manufacturing a semiconductor device. This method involves providing a substrate with distinct regions, forming a metal oxide film, and creating an upper metal material film that does not overlap with the metal oxide film. The process culminates in the simultaneous annealing of these films to produce both ferroelectric and paraelectric insulating films.

Career Highlights

Musarrat Hasan is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.

Collaborations

Musarrat collaborates with talented individuals in his field, including Jongho Park and Wandon Kim. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in technology.

Conclusion

Musarrat Hasan's contributions to the field of semiconductor technology, particularly in ferroelectric memory devices, highlight his role as a leading inventor. His innovative patents and collaborations with esteemed colleagues underscore his commitment to advancing technology.

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