The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Oct. 15, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Do Young Choi, Hwaseong-si, KR;
Kab Jin Nam, Seoul, KR;
In Bong Pok, Hwaseong-si, KR;
Dae Won Ha, Seoul, KR;
Musarrat Hasan, Sejong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a semiconductor device, the method including providing a substrate including a first region and a second region such that the second region is separated from the first region; forming a metal oxide film on the first region of the substrate and the second region of the substrate; forming an upper metal material film on the metal oxide film on the first region of the substrate such that the upper metal material film does not overlap the metal oxide film on the second region of the substrate; and simultaneously annealing the upper metal material film and the metal oxide film to form a ferroelectric insulating film on the first region of the substrate and form a paraelectric insulating film on the second region of the substrate.