The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2011

Filed:

Dec. 07, 2007
Applicants:

Yongho Ha, Kyeonggi-Do, KR;

Jihye Yi, Kyeonggi-Do, KR;

Hyunjo Kim, Kyeonggi-Do, KR;

Inventors:

Yongho Ha, Kyeonggi-Do, KR;

Jihye Yi, Kyeonggi-Do, KR;

Hyunjo Kim, Kyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase changeable memory cell is disclosed. According to embodiments of the invention, a phase changeable memory cell is formed that has a reduced contact area with one of the electrodes, compared to previously known phase changeable memory cells. This contact area can be a sidewall of one of the electrodes, or a perimeter edge of a contact opening through the electrode. Thus, when the thickness of the electrode is relatively thin, the contact area between the electrode and the phase changeable material pattern is relatively very small. As a result, it is possible to reduce power consumption of the phase changeable memory device and to form reliable and compact phase changeable memory cells.


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Ha, Yongho. (2011). Phase changeable memory devices (U.S. Patent No. 7893417). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7893417

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