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For the Inventor, By the Inventor

Fremont, CA, United States of America

Yi Yang

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This inventor holds 56 USPTO granted patents and 7 published patent applications and 1 EPO patent, primarily in MRAM Fabrication (CPC class H01L). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Headway Technologies, Incorporated. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi Yang. Retrieved from https://idiyas.com/inventor/yi-yang-qkrzz53q

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 56 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.3

ph-index = 4

Forward Citations = 80(Granted Patents)

Forward Citations (Not Self Cited) = 48(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Freemont, CA (US) (2020)
  • Fremont, CA (US) (2018 - 2024)

Company Filing History:

goldMedal48 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal8 out of 1,230 
 
Headway Technologies, Incorporated
 patents

Years Active: 2018-2025

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Areas of Expertise:
MRAM Devices
Ion Beam Etching
Magnetic Tunnel Junction
Hard Mask
Photoresist
Etch Resistive
Conductive Re-deposition
Spacer Assisted Etching
Device Performance
Sub 60nm Technology
CMP Stop Layer
Hybrid Hard Mask
56 patents (USPTO):Explore Patents
1. 12414479 - Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode (2025-09-09),
2. 12310245 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2025-05-20),
3. 12245516 - Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition (2025-03-04),
4. 12207567 - Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process (2025-01-21),
5. 12185638 - Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60nm MRAM devices (2024-12-31),
6. 12108679 - Multiply spin-coated ultra-thick hybrid hard mask for sub 60nm MRAM devices (2024-10-01),
7. 11985905 - Highly physical ion resistive spacer to define chemical damage free sub 60nm MRAM devices (2024-05-14),
8. 11963457 - MTJ device performance by controlling device shape (2024-04-16),
9. 11930715 - Highly physical etch resistive photoresist mask to define large height sub 30nm via and metal hard mask for MRAM devices (2024-03-12),
10. 11856864 - Sub 60nm etchless MRAM devices by ion beam etching fabricated T-shaped bottom electrode (2023-12-26),
11. 11818961 - Self-aligned encapsulation hard mask to separate physically under-etched MTJ cells to reduce conductive re-deposition (2023-11-14),
12. 11800811 - MTJ CD variation by HM trimming (2023-10-24),
13. 11785863 - Under-cut via electrode for sub 60nm etchless MRAM devices by decoupling the via etch process (2023-10-10),
14. 11723281 - Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60nm MRAM devices (2023-08-08),
15. 11631802 - Etching and encapsulation scheme for magnetic tunnel junction fabrication (2023-04-18),

Title: **Innovations of Yi Yang: A Pioneer in MRAM Technology**

Introduction

Yi Yang is a recognized inventor based in Fremont, California, holding an impressive portfolio of 53 patents. His contributions to the field of magnetic memory technology, particularly with MRAM (Magnetoresistive Random Access Memory), showcase his innovative approaches to tackling complex challenges in semiconductor fabrication.

Latest Patents

Among his recent innovations, Yi Yang has developed a groundbreaking method for fabricating a magnetic tunneling junction (MTJ) structure that involves under-cut via electrodes for sub 60nm etchless MRAM devices. This method entails the deposition of a first dielectric layer on a bottom electrode, which is then partially etched to form a first via opening with straight sidewalls. Following this, a second via opening featuring tapered sidewalls is etched all the way through to the bottom electrode. His creativity extends to the design of a metal/dielectric/metal hybrid hard mask that defines an ultra-large height top electrode for MRAM devices. This innovative structure utilizes a novel thin metal/thick dielectric/thick metal hybrid hard mask stack, optimizing etching parameters to protect the integrity of the metal layers while achieving high electrode elevations.

Career Highlights

Yi Yang has made significant contributions during his tenure at leading organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and Headway Technologies, Incorporated. His work has focused primarily on enhancing the efficiency and performance of MRAM technology, fostering advancements that positively impact the industry.

Collaborations

During his career, Yi has collaborated with notable experts, including Yu-Jen Wang and Dongna Shen. These partnerships have allowed him to leverage diverse perspectives and expertise, reinforcing the innovative nature of his projects and contributing to successful outcomes in his research endeavors.

Conclusion

Yi Yang's remarkable achievements in the field of semiconductor technology, especially regarding MRAM systems, underline his role as a forward-thinking inventor. With numerous patents to his name, his contributions continue to influence the pathway of innovations in memory technology, making him a notable figure in the realm of invention and research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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