Yi Yang

Title: **Innovations of Yi Yang: A Pioneer in MRAM Technology**

Introduction

Yi Yang is a recognized inventor based in Fremont, California, holding an impressive portfolio of 53 patents. His contributions to the field of magnetic memory technology, particularly with MRAM (Magnetoresistive Random Access Memory), showcase his innovative approaches to tackling complex challenges in semiconductor fabrication.

Latest Patents

Among his recent innovations, Yi Yang has developed a groundbreaking method for fabricating a magnetic tunneling junction (MTJ) structure that involves under-cut via electrodes for sub 60nm etchless MRAM devices. This method entails the deposition of a first dielectric layer on a bottom electrode, which is then partially etched to form a first via opening with straight sidewalls. Following this, a second via opening featuring tapered sidewalls is etched all the way through to the bottom electrode. His creativity extends to the design of a metal/dielectric/metal hybrid hard mask that defines an ultra-large height top electrode for MRAM devices. This innovative structure utilizes a novel thin metal/thick dielectric/thick metal hybrid hard mask stack, optimizing etching parameters to protect the integrity of the metal layers while achieving high electrode elevations.

Career Highlights

Yi Yang has made significant contributions during his tenure at leading organizations, including Taiwan Semiconductor Manufacturing Company Ltd. and Headway Technologies, Incorporated. His work has focused primarily on enhancing the efficiency and performance of MRAM technology, fostering advancements that positively impact the industry.

Collaborations

During his career, Yi has collaborated with notable experts, including Yu-Jen Wang and Dongna Shen. These partnerships have allowed him to leverage diverse perspectives and expertise, reinforcing the innovative nature of his projects and contributing to successful outcomes in his research endeavors.

Conclusion

Yi Yang's remarkable achievements in the field of semiconductor technology, especially regarding MRAM systems, underline his role as a forward-thinking inventor. With numerous patents to his name, his contributions continue to influence the pathway of innovations in memory technology, making him a notable figure in the realm of invention and research.