The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Jul. 28, 2023
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Yi Yang, Fremont, CA (US);
Yu-Jen Wang, San Jose, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); H10B 61/00 (2023.02);
Abstract
An ultra-large height top electrode for MRAM is achieved by employing a novel thin metal/thick dielectric/thick metal hybrid hard mask stack. Etching parameters are chosen to etch the dielectric quickly but to have an extremely low etch rate on the metals above and underneath. Because of the protection of the large thickness of the dielectric layer, the ultra-large height metal hard mask is etched with high integrity, eventually making a large height top electrode possible.