Kaohsiung, Taiwan

Yi-Ren Chen


Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2011-2025

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5 patents (USPTO):Explore Patents

Title: Yi-Ren Chen: Innovator in Semiconductor Technology

Introduction

Yi-Ren Chen is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His innovative designs and concepts have advanced the capabilities of semiconductor devices.

Latest Patents

Yi-Ren Chen's latest patents focus on advanced semiconductor devices. One of his notable inventions includes a semiconductor device that features a fin-shaped structure on a substrate, surrounded by shallow trench isolation (STI). This device incorporates a single diffusion break (SDB) structure within the fin-shaped structure, effectively dividing it into two portions. The design also includes multiple gate structures, with the third gate structure having a greater width than the second. Each gate structure is composed of a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer. This innovative approach enhances the performance and efficiency of semiconductor devices.

Career Highlights

Throughout his career, Yi-Ren Chen has worked with notable organizations such as United Microelectronics Corporation and National Chung Cheng University. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Yi-Ren Chen has collaborated with esteemed colleagues, including Shou-Wei Hsieh and Hsin-Yu Chen. These partnerships have fostered a creative environment that has led to the development of innovative solutions in the semiconductor field.

Conclusion

Yi-Ren Chen's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the future of semiconductor devices and their applications.

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