The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2025
Filed:
Mar. 22, 2021
United Microelectronics Corp., Hsin-Chu, TW;
Cheng-Han Wu, Hsinchu, TW;
Hsin-Yu Chen, Nantou County, TW;
Chun-Hao Lin, Kaohsiung, TW;
Shou-Wei Hsieh, Hsinchu, TW;
Chih-Ming Su, Tainan, TW;
Yi-Ren Chen, Kaohsiung, TW;
Yuan-Ting Chuang, Yilan County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a fin-shaped structure on the substrate, a shallow trench isolation (STI) around the fin-shaped structure, a single diffusion break (SDB) structure in the fin-shaped structure for dividing the fin-shaped structure into a first portion and a second portion; a first gate structure on the fin-shaped structure, a second gate structure on the STI, and a third gate structure on the SDB structure. Preferably, a width of the third gate structure is greater than a width of the second gate structure and each of the first gate structure, the second gate structure, and the third gate structure includes a U-shaped high-k dielectric layer, a U-shaped work function metal layer, and a low-resistance metal layer.