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For the Inventor, By the Inventor

Hsinchu, Taiwan

Shou-Wei Hsieh

This inventor holds 35 USPTO granted patents and 6 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: United Microelectronics Corp., Utek Semiconductor Corporation. Active years: 2000-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shou-Wei Hsieh. Retrieved from https://idiyas.com/inventor/shou-wei-hsieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 91.4


Average Co-Inventor Count = 3.1

ph-index = 5

Forward Citations = 77(Granted Patents)


Company Filing History:

goldMedal34 out of 7,278 
 
United Microelectronics Corp.
 patents
silverMedal1 out of 11 
 
Utek Semiconductor Corporation
 patents

Years Active: 2000-2026

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Areas of Expertise:
Semiconductor Device
Fabrication Method
FinFET
NMOS Structure
High Electron Mobility Transistor
Dual-Bit Memory Cell
Epitaxial Layer
Tunneling Field Effect Transistor
Flash Memory
Capacitor on Fin Structure
MOS Device
Barrier Layer
35 patents (USPTO):Explore Patents
1. 12696499 - Semiconductor device and manufacturing method thereof (2026-07-28),
2. 12672340 - Capacitor on fin structure and fabricating method of the same (2026-06-30),
3. 12249649 - Semiconductor device (2025-03-11),
4. 12237350 - NMOS structure and manufacturing method thereof (2025-02-25),
5. 12237329 - Semiconductor device and method for fabricating the same (2025-02-25),
6. 12125900 - Semiconductor device and method for fabricating the same (2024-10-22),
7. 12100756 - High electron mobility transistor device having a barrier layer with a protruding portion (2024-09-24),
8. 12100750 - Semiconductor device and method for fabricating the same (2024-09-24),
9. 11876095 - Method for enlarging tip portion of a fin-shaped structure (2024-01-16),
10. 11581422 - Semiconductor device and method for fabricating the same (2023-02-14),
11. 11527638 - Semiconductor device and method for fabricating the same (2022-12-13),
12. 11088137 - Method for enlarging tip portion of a fin-shaped structure (2021-08-10),
13. 10991824 - Semiconductor device (2021-04-27),
14. 10943993 - Semiconductor device and method for fabricating the same (2021-03-09),
15. 10692780 - Method for protecting epitaxial layer by forming a buffer layer on NMOS region (2020-06-23),

Title: The Innovative Journey of Shou-Wei Hsieh

Introduction: Shou-Wei Hsieh is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shou-Wei Hsieh holds several patents in the areas of semiconductor technology, renewable energy, and artificial intelligence, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Shou-Wei Hsieh has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry.

Collaborations: Throughout his career, Shou-Wei Hsieh has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge exchange.

Conclusion: Shou-Wei Hsieh's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true visionary in the world of inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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