The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Jul. 05, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); H01L 27/02 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/308 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823462 (2013.01); H01L 21/823481 (2013.01); H01L 27/0207 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/66545 (2013.01); H01L 29/66818 (2013.01); H01L 21/845 (2013.01);
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; forming a patterned mask on the second region; and performing a process to enlarge the first fin-shaped structure so that the top surfaces of the first fin-shaped structure and the second fin-shaped structure are different.