Tainan, Taiwan

Yi-Fang Yang


Average Co-Inventor Count = 5.7

ph-index = 2

Forward Citations = 49(Granted Patents)


Company Filing History:


Years Active: 2018-2025

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7 patents (USPTO):Explore Patents

Title: Yi-Fang Yang: Innovator in Semiconductor Technology

Introduction

Yi-Fang Yang is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work focuses on the development of advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Among his latest patents, one describes a semiconductor device that includes a single-layered dielectric layer, a conductive line, a conductive via, and a conductive pad. In this design, the conductive line and the conductive via are integrated within the single-layered dielectric layer, while the conductive pad extends into the dielectric layer to establish an electrical connection with the conductive line. Another patent outlines a semiconductor device featuring a substrate, a dielectric layer, multiple dielectric patterns, and a conductive pad. This device is designed with the substrate positioned between the dielectric layer and its opposite surface, with the conductive pad inserted among the dielectric patterns and extending into the dielectric layer.

Career Highlights

Yi-Fang Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His innovative work has positioned him as a key figure in the development of cutting-edge semiconductor technologies.

Collaborations

He collaborates with notable colleagues, including Yi-Hung Chen and Keng-Ying Liao, who contribute to his research and development efforts.

Conclusion

Yi-Fang Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to drive advancements in semiconductor devices, showcasing the importance of innovation in technology.

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