The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 31, 2019

Filed:

Apr. 17, 2017
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Yi-Fang Yang, Tainan, TW;

Yi-Hung Chen, Kaohsiung, TW;

Keng-Ying Liao, Tainan, TW;

Yi-Jie Chen, Tainan, TW;

Shih-Hsun Hsu, Tainan, TW;

Chun-Chi Lee, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14685 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14649 (2013.01);
Abstract

A semiconductor device includes a substrate, a conductive layer, a transparent layer, a transparent hard mask layer, a carrier, and a device layer. The substrate has a first surface and a second surface opposite to each other. The conductive layer is disposed on the first surface of the substrate. The transparent layer is disposed on the conductive layer. The transparent hard mask layer is disposed on the transparent layer, in which the substrate has an etch selectivity with respect to the transparent hard mask layer. The device layer is disposed between the carrier and the second surface of the substrate, in which various portions of the device layer are respectively exposed by various through holes which pass through the transparent hard mask layer, the transparent layer, the conductive layer, and the substrate.


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