Yeou-Ming Lin

Title: Yeou-Ming Lin: Innovator in Microelectronics

Introduction

Yeou-Ming Lin is a prominent inventor based in Jungli, Taiwan. He has made significant contributions to the field of microelectronics, holding a total of 4 patents. His work focuses on improving the performance and manufacturability of microelectronic devices.

Latest Patents

One of his latest patents is titled "Method and structure for forming high-k gates." This invention describes a method for creating an improved gate stack structure that enhances electrical properties during the gate structure formation process. The method involves providing a silicon substrate with exposed surface portions, forming an interfacial layer, and creating a high dielectric constant metal oxide layer. The process culminates in etching to form a high dielectric constant gate structure.

Another notable patent is the "Chemical vapor deposition (CVD) method employing wetting pre-treatment." This innovation outlines a CVD method for forming a microelectronic layer that utilizes a wetting material treatment on the substrate. This treatment reduces the incubation time required for layer formation, particularly in digital CVD methods, thereby enhancing manufacturability.

Career Highlights

Yeou-Ming Lin is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to contribute to cutting-edge technologies in microelectronics.

Collaborations

Throughout his career, Lin has collaborated with notable colleagues, including Ming-Fang Wang and Tuo-Hung Hou. These collaborations have further enriched his research and development efforts in the field.

Conclusion

Yeou-Ming Lin's innovative work in microelectronics, particularly in the development of high-k gate structures and advanced CVD methods, showcases his significant impact on the industry. His contributions continue to influence the future of microelectronic manufacturing.