The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2004
Filed:
Apr. 24, 2003
Applicant:
Inventors:
Liang-Gi Yao, Hsing-Chu, TW;
Ming-Fang Wang, Taichung, TW;
Yeou-Ming Lin, Jungli, TW;
Tuo-Hung Ho, Chia-Yi, TW;
Shih-Chang Chen, Taoyuan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/120 ; H01L 2/136 ; H01L 2/1336 ;
Abstract
A chemical vapor deposition (CVD) method for forming a microelectronic layer within a microelectronic product employs a wetting material treatment of a substrate upon which is formed the microelectronic layer. The wetting material treatment provides for an attenuated incubation or induction time when forming the microelectronic layer, particularly within the context of a digital CVD method, such as an atomic layer CVD method. The microelectronic layer is thus formed with enhanced manufacturability.