The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2003
Filed:
Aug. 13, 2001
Applicant:
Inventors:
Mo-Chiun Yu, Taipei, TW;
Yeou-Ming Lin, Chung-Li, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/131 ;
U.S. Cl.
CPC ...
H01L 2/131 ;
Abstract
A low temperature ozone-enhanced oxidation process is presented whereby amorphous high dielectric constant film devices are subject to oxidation processes at temperatures whereby crystallization of the amorphous high dielectric constant film is avoided, thereby lowering leakage currents and reducing the required thickness to achieve an equivalent SiO thickness (EOT)
Yu, Mo-Chiun. (2003). Ozone-enhanced oxidation for high-k dielectric semiconductor devices (U.S. Patent No. 6573193). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6573193
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile