Taipei, Taiwan

Mo-Chiun Yu

This inventor holds 25 USPTO granted patents, primarily in High-K Dielectric Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2000-2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mo-Chiun Yu. Retrieved from https://idiyas.com/inventor/mo-chiun-yu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 80.0

Average Co-Inventor Count = 2.0

ph-index = 14

Forward Citations = 382(Granted Patents)


Location History:

  • Taipei, TW (2000 - 2004)
  • Chung-Ho, TW (2004 - 2006)

Company Filing History:


Years Active: 2000-2006

Loading Chart...
Areas of Expertise:
High-K Dielectrics
Gate Oxides
Semiconductor Fabrication
Plasma Nitridation
Oxidation Processes
Charge Balanced Dielectric
Thin Silicon Nitride
Leakage Current Reduction
Ultra-Thin Gate Insulators
Composite Gate Dielectric
Integrated Circuits
Field Effect Transistors
25 patents (USPTO):Explore Patents

Title: Innovations by Mo-Chiun Yu: Advancements in Semiconductor Technology

Introduction

Mo-Chiun Yu, a prominent inventor based in Taipei, Taiwan, has made significant contributions to the field of semiconductor technology. With a remarkable total of 25 patents to his name, he has established himself as a leader in the development of innovative methods that enhance the performance and efficiency of semiconductor devices.

Latest Patents

Among his latest patented inventions is a groundbreaking method of generating multiple oxides by plasma nitridation on oxide. This method involves the formation of multiple gate oxide thicknesses on active areas that are separated by STI isolation regions on a substrate. The process begins with the growth of a first layer of oxide, approximately 50 Angstroms thick, from which selected regions are subsequently removed. A second, thinner layer of oxide is then grown, which allows for the creation of three different gate oxide thicknesses. Selected regions are nitridated with nitrogen plasma, which enhances the dielectric constant of the gate oxide while reducing the effective oxide thickness. This innovative nitridation technique not only prevents impurity dopants from migrating across the gate oxide layer but also decreases standby current leakage and minimizes corner loss of STI regions caused by HF etchant.

Career Highlights

Mo-Chiun Yu is currently associated with Taiwan Semiconductor Manufacturing Company Limited, a leading organization in the semiconductor industry. His work at TSMC has significantly impacted the company's ability to create advanced semiconductor solutions, benefiting a wide array of technological applications.

Collaborations

Throughout his career, Yu has collaborated with experts in the field, including prominent coworkers such as Syun-Ming Jang and Chien-Hao Chen. These collaborations have further propelled his research and innovations, contributing to the overall advancement of semiconductor technology.

Conclusion

With his extensive portfolio of patents and collaborative efforts, Mo-Chiun Yu continues to play a pivotal role in the evolution of semiconductor technologies. His innovative methods, particularly in oxide generation and nitridation processes, are setting new benchmarks in the industry, ensuring that both performance and efficiency are significantly enhanced in modern semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…