The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2003
Filed:
Jan. 11, 2002
Applicant:
Inventors:
Mo-Chiun Yu, Taipei, TW;
Chien-Hao Chen, Ilan, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1338 ; H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1338 ; H01L 2/13205 ; H01L 2/14763 ;
Abstract
To achieve a lower operating gate voltage for an FET, while avoiding breakdown and similar problems, a high K dielectric such as aluminum or zirconium oxide can be used As deposited, these materials tend to have a high density of trapped charge. The present invention discloses how such charge may be neutralized by impregnating the high K dielectric layer with between about 5 and 10 atomic percent of nitrogen. Several methods for introducing the nitrogen are described. These include diffusion from an overlay of silicon nitride, diffusion from a gas source, remote plasma nitridation, and decoupled plasma nitridation.