The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2004
Filed:
Jul. 02, 2002
Chien-Ming Hu, Hsin-Chu, TW;
Chien-Hao Chen, Ilan, TW;
Mo-Chiun Yu, Taipei, TW;
Shih-Chang Chen, Taoyuan, TW;
Mong-Song Liang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a silicon nitride-silicon dioxide composite insulator layer for use as a gate insulator stack for an MOSFET device, has been developed. The method features formation of the silicon dioxide component of the gate insulator stack, after formation of the overlying silicon nitride component, allowing the gate insulator stack to be comprised with a nitrogen profile presenting enhanced barrier characteristic and less interface charge than counterpart silicon nitride-silicon dioxide composites formed wherein the silicon nitride component was deposited on an already grown underlying silicon dioxide layer. Oxygen ions, or oxygen radicals obtained via ultra-violet procedures, penetrate the silicon nitride component and locate in a top portion of the semiconductor substrate. Subsequent annealing allows reaction of the oxygen ions or radicals with a top portion of the semiconductor substrate resulting in the desired silicon dioxide component underlying silicon nitride.